elektronische bauelemente SMG2392N 0.6a, 150v, r ds(on) 2.6 ? n-channel enhancement mode mosfet 21-may-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typ ical applications are features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper lead frame sc-59 saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sc-59 3k 7 inch absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol ratings unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v t a =25 c 0.6 continuous drain current 1 t a =70 c i d 0.4 a pulsed drain current 2 i dm 10 a continuous source current (diode conduction) 1 i s 1.7 a t a =25 c 1.3 w power dissipation 1 t a =70 c p d 0.8 w operating junction and storage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings t Q 10sec 100 maximum junction to ambient 1 steady state r ja 166 c / w notes: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction temperat ure. sc-59 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2. 25 3 . 0 0 h 0.40 ref. c 1.3 0 1. 7 0 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 1 2 3
elektronische bauelemente SMG2392N 0.6a, 150v, r ds(on) 2.6 ? n-channel enhancement mode mosfet 21-may-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =120v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =120v, v gs = 0, t j = 55 c on-state drain current 1 i d(on) 1 - - a v ds =5v, v gs =10v - - 2.6 v gs =10v, i d =0.48a drain-source on-resistance 1 r ds(on) - - 2.8 v gs =5.5v, i d =0.4a forward transconductance 1 g fs - 15 - s v ds =15v, i d =0.48a diode forward voltage v sd - 0.81 - v i s =0.9a, v gs =0 dynamic 2 total gate charge q g - 4 - gate-source charge q gs - 1.1 - gate-drain charge q gd - 2.2 - nc v ds =75v, v gs =5.5v, i d =0.48a input capacitance c iss - 169 - output capacitance c oss - 15 - reverse transfer capacitance c rss - 12 - pf v ds =15v, v gs =0, f=1mhz turn-on delay time t d(on) - 4 - rise time t r - 5 - turn-off delay time t d(off) - 16 - fall time t f - 8 - ns v dd =75v, v gen =10v, r l =156.3 , r gen =6 i d =0.48a notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not subject to production testing.
elektronische bauelemente SMG2392N 0.6a, 150v, r ds(on) 2.6 ? n-channel enhancement mode mosfet 21-may-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SMG2392N 0.6a, 150v, r ds(on) 2.6 ? n-channel enhancement mode mosfet 21-may-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
|
